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Publications in 1999-2001

Anthony E Parker and Jame G Rathmell, "Relating dynamics of FET behavior to operating regions," in 58rd ARFTG Conference Digest, (Brian Pugh, Ed.), San Diego, CA, USA, 29-30 Nov. 2001, Automated RF Techniques Group, ARFTG Conference Archive, pp. 1-10, The Institute of Electrical and Electronics Engineers, Inc., New York, NY, USA

ISBN: 0-9717762-0-2,
CD-ROM File: //documents/58\_175.pdf.

Abstract- Dispersion effects and the operating regions they effect are identified in a HEMT and a MESFET. Large-signal pulse and small-signal RF measurements reveal a simple structure to the otherwise complicated dynamic behavior of the FETs. A simple model demonstrates how heating, impact ionization, and leakage currents can contribute to this behavior and that each has an effect in specific regions of bias and operating frequency. It is possible to identify operating conditions that will or will not be affected by dispersion with measurements over a wide range of frequencies from dc to microwave and a range of terminal potentials.

Anthony E Parker and James Grantley Rathmell, "Measurement and Characterization of HEMT Dynamics," IEEE Transactions on Microwave Theory and Techniques, vol. 49, no. 11, pp. 2105-2111, Nov. 2001.
The Institute of Electrical and Electronics Engineers, Inc., New York, NY, USA, (New York, NY, USA),
ISSN: 0018-9480.

Abstract- The variation of high electron-mobility transistor (HEMT) large-signal behavior with a change in operating condition is examined with a view to understanding the dynamics involved and developing a modeling strategy. The observed variation exhibits the dynamics of thermal, impact ionization, and trapping effects. A novel measurement of drain characteristic transients gives time-evolution information that clearly shows these as separate quantifiable phenomena with significant dependence on initial operating conditions. A drain?current model that describes high-frequency characteristics with pinchoff, gain, and drain feedback parameters is adapted to describe the variation of the characteristics with changing operating conditions. The results reported give insight and grounding for simulation of HEMT circuits.

Anthony E Parker and Guoli Qu, "Measurement and simulation of IM distortion in high mobility transistors," in Sixth International Conference on Solid State and IC Technology (ICSICT-2001), Shanghai, China, 22-25 Oct. 2001, vol. 2, pp. 1337-1339, The Institute of Electrical and Electronics Engineers, Inc., New York, NY, USA

ISBN: 0-7803-6520-8.

Abstract- This paper reports the characterisation of intermodulation (IM) distortion in high electron mobility transistors (HEMTs). The second- and third-order IM products in HEMT common-source amplifiers are measured and simulated comprehensively. The comparison of measured and simulated IM products as a function of gate-source voltage, drain-source voltage, input level as well as load impedance are reported. Excellent agreement between measurements and simulations is achieved.

Anthony Edward Parker and James Grantley Rathmell, [eumw01] "Analysis of HEMT Time-Evolution Characteristics," in European Microwave Conference, (Vito Monaco, Ed.), London, UK, 24-27 Sep. 2001, The European Microwave Association, vol. 1, pp. 375-378, Microwave Engineering Europe

ISBN: 0-86213-148-0.

Abstract- A novel transient measurement of the time-evolution of drain characteristics is analyzed to separate thermal and trapping dispersions. The procedure extracts isothermal characteristics from the measured data and parameterizes thermal dispersion. A significant dispersion effect in the isothermal characteristics is then linked to leakage currents that are related to drain potential. The effect of impact ionization is also evident in the data. This analysis provides information necessary to formulate bias- and rate-dependent models of HEMTs.

David G Haigh, Danny R Webster, Reza Ataei, tony E Parker, and Jonathan B Scott, "Issues in nonlinear circuit theory and application to high frequency linear amplifier design," in Proceedings of 2001 Workshop on Nonlinear Dynamics of Electronics Systems, (Arie vanStaveren, Ed.), Delft, The Netherlands, 21-23 June 2001, Delft University of Technology, pp. 1-15, The Institute of Electrical and Electronics Engineers, Inc., New York, NY, USA

ISBN: 90-407-2194-7.

Abstract- This tutorial presents some concepts and techniques in nonlinear circuit theory which relate to the description of the nonlinear behaviour of high frequency field effect transistors and analyses the nonlinearity that occurs in circuits in which they are embedded. The concepts are sufficiently simple that they provide considerable engineering insight into nonlinear device and circuit behaviour and also allow hand analysis and design while providing sufficient relationship to real devices that practical high frequency power and medium signal amplifiers can be designed to meet stringent specifications that arise in communication systems.

Anthony Edward Parker and James Grantley Rathmell, [iscas01b] "Dynamics of microwave FET behaviour," in 2001 IEEE International Symposium on Circuits and Systems Tutorial Guide, (Anthony Parker, Ed.), pp. 2.6.1-2.6.10. The Institute of Electrical and Electronics Engineers, Inc., New York, NY, USA, Sydney, Australia, 6-9 May 2001.

ISBN: 0-7803-7113-5.

Abstract- empty abstract

(Anthony Parker, Ed.),
[iscas01a] 2001 IEEE International Symposium on Circuits and Systems Tutorial Guide. The Institute of Electrical and Electronics Engineers, Inc., New York, NY, USA, Sydney, Australia, 6-9 May 2001.

ISBN: 0-7803-7113-5,
270 pages.

Abstract- ISCAS2001 offers this exciting Tutorial Program, which features a set of ten short courses covering a diverse range of topics. Devices and device specific circuit design techniques are addressed by three tutorials dedicated to high speed devices, VLSI design, and VLSI scaling. Three tutorials are dedicated to communications and wireless technologies. Other tutorials deal with the non-conventional design techniques in biomedical electronics, the systematic design of analog functions, discrete-time chaotic systems and the new field of statistical learning theory.

Anthony E Parker and Guoli Qu, "Intermodulation Nulling in HEMT Common Source Amplifiers," IEEE Microwave and Wireless Components Lett., vol. 11, no. 3, pp. 109-111, Mar. 2001.
The Institute of Electrical and Electronics Engineers, Inc., New York, NY, USA, (New York, NY, USA),
ISSN: 1531-1309.

Abstract- A new model of the second- and third-order intermodulation products from HEMT and MESFET small-signal amplifiers, resulting from nonlinear drain-source current has been proposed in our previous publications. Based on this model, intermodulation nulling conditions in terms of the Taylor series coefficients, hence in terms of bias, have been investigated. This paper now examines the load dependence of the second- and third-order intermodulation products in HEMT small-signal common source amplifiers. Intermodulation nulling conditions are proposed and validated. This is useful in designing a high performance amplifier by calculation of optimum load for minimum distortion and studying distortion generation as a function of circuit topology.

D R Webster, M T Hutabarat, A E Parker, and D G Haigh, "Designing low distortion continuously variable attenuators for microwave frequencies," in IEE Seminar Low Power IC Design (Ref. No.01/042), London, UK, 19 Jan. 2001, number 042 in IEE 2001 Seminar Digests, pp. 171-173, The Institution Electrical Engineers, Savoy Place, London, UK

ISSN: 0963-3308.

Abstract- The paper briefly reviews commonly used attenuator topologies. The requirements of an FET I-V model for nonlinear simulation of attenuator circuits are stated. An improved MESFET/HEMT I-V model is then described. The properties of ac coupled stacked cold FET structures are briefly discussed. Measurements on two pi FET attenuators and a double hybrid FET attenuator are presented.

Guoli Qu and Anthony E Parker, "S-parameter simulation with a new MOSFET model," in Asia-Pacific Microwave Conference Proceedings, (A Parfitt, Ed.), The Wentworth Hotel, Sydney, Australia, 3-6 Dec. 2000, pp. 850-853, The Institute of Electrical and Electronics Engineers, Inc., New York, NY, USA

ISBN: 0-7803-6436-8.

Abstract- This paper presents a new MOSFET model, which has been implemented in SPICE3f4 for verification and testing. The DC and S-parameters of a MOSFET are measured and simulated. Simulations performed with the new model agree well with measurements.

Anthony Edward Parker and James Grantley Rathmell, "Measurement and Characterisation of HEMT Dynamics," in Asia-Pacific Microwave Conference Proceedings, (A Parfitt, Ed.), The Wentworth Hotel, Sydney, Australia, 3-6 Dec. 2000, pp. 846-849, The Institute of Electrical and Electronics Engineers, Inc., New York, NY, USA

ISBN: 0-7803-6436-8.

Abstract- Large-signal dynamic behaviour of HEMTs is characterized for all bias points by bias-dependent pinch-off, gain, and drain feedback parameters. A novel drain current model uses these parameters to describe the dispersion effects. The model and parameters, presented here, give an insight into the operation of HEMTs.

Anthony E Parker, James G Rathmell, and Jonathan B Scott, [crc00] "Pulsed Measurements," in The RF and Microwave Handbook, (Mike Golio, Ed.), vol. 22 of Electrical Engineering Handbook, chapter 6, pp. 4-68-4-95. CRC Press LLC, USA, first edition, 2000.

ISBN: 0-8493-8592-X.

Abstract- Pulsed measurements ascertain the radio-frequency (RF) behavior of transistors or other devices at an unchanging bias condition. A pulsed measurement of a transistor begins with the application of a bias to its terminals. After the bias has settled to establish a quiescent condition, it is perturbed with pulsed stimuli during which the change in terminal conditions, voltage and current, is recorded. Sometimes a RF measurement occurs during the pulse. The responses to the pulse stimuli quantify the behavior of the device at the established quiescent point. Characteristic curves, which show the relationship between terminal currents or RF parameters and the instantaneous terminal potentials, portray the behavior of the device.

Anthony E Parker and Guoli Qu, [eumc00] "Intermodulation Distortion Simulation with a New MOSFET Model," in 30th European Microwave Conference Proceedings, CNIT La Defense, Paris, France, 2-6 Oct. 2000, European Microwave Association, London, vol. 3, pp. 187-190

ISBN: 0-86213-212-6.

Abstract- The second- and third-order intermodulation products of MOSFET amplifiers are investigated with a new MOSFET model, which has been implemented in SPICE3f4. Simulations performed with the new model agree well with measurements.

G Qu and A E Parker, "Modelling HEMT intermodulation distortion characteristics," Microelectronics Journal, vol. 31, no. 7, pp. 493-496, July 2000.
Elsevier Science Ltd., (London, UK),
ISSN: 0026-2692.

Abstract- The significance of nonlinearity of HEMT capacitance models to the reduction of intermodulation is investigated. Three capacitance models, one linear and two with contrasting nonlinear behaviour, are shown to exhibit almost identical performance. It is concluded that the nonlinearity of the low-frequency model is the dominant distortion generating component. Development of capacitance models with accurate high-order derivatives is unwarranted without an accurate dc model. Therefore, careful characterization of the drain current description is most important for the successful circuit simulation.

M Hutabarat, D R Webster, D G Haigh, I Thayne, D Edgar, Khalid, Z Borsosfoldi, D Schreurs, K van derZanden, and A E Parker, "On wafer intermodulation distortion measurements on resistive FET mixers for device comparison and model validation," in The 7th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications, (A Rezazadeh, Ed.), University College London, London, UK, 22-23 Nov. 1999, pp. 170-175, The Institute of Electrical and Electronics Engineers, UK

ISBN: 0-7803-5298-X.

Abstract- This work describes an `on wafer' mixer measurement test set that is close to real single FET mixer designs. The test set demonstrated for the first time that some GaAs p-HEMTs have better 3rd order intermodulation performance than some GaAs MESFETs when used as resistive FET mixers. It is also shown that HEMTs give the same conversion loss of MESFETs with a significantly smaller gate width. Preliminary simulations with both table and empirical models were presented, showing that further work is required before CAD models can be used to successfully minimise 3rd order intermodulation distortion in resistive FET mixers.

Guoli Qu and Anthony E Parker, [spie99] "Modeling HEMT Intermodulation Distortion Characteristics," in Design, Characterization, and Packaging for MEMS and Microelectronics, (Serge Demidenko Bernard Courtois, Ed.), Washington USA, 27-29 Oct. 1999, SPIE--The International Society for Optical Engineering, vol. 3893 of Proceedings of SPIE Vol.\ 3893, pp. 396-402

ISSN: 0277-786X,
Part of the Conference on Design, Characterization, and Packaging for MEMS and Microelectronics, Royal Pines Resort, Queensland, Australia, ISBN:0-8194-3494-9.

Abstract- The significance of the nonlinearity of HEMT capacitance models to the prediction of intermodulation is investigated. Three capacitance models, one linear and two with contrasting nonlinear behavior, are shown to exhibited almost identical performance. It is concluded that the nonlinearity of the low-frequency model is the dominant distortion generating component. Development of capacitance models with accurate high-order derivatives is unwarranted without an accurate dc model. Therefore, careful characterization of the drain current description is most important for successful circuit simulation.

Anthony Edward Parker, [ieee99] "Teaching and Research in Microwave and Electromagnetic Engineering: Macquarie University," in IEEE Colloquium on Teaching and Research in Microwave and Electromagnetic Engineering: An Australian Perspective, University of Technology, Sydney, 24 Sep. 1999, The Institute of Electrical and Electronics Engineers.

Abstract- empty abstract

K M McNally, J M Dawes, A E Parker, A Lauto, J A Piper, and E R Owen, "Laser-Activated Solid Protein Solder for Nerve Repair: In Vitro Studies of Tensile Strength and Solder/Tissue Temperature," Lasers in Medical Science, vol. 14, no. 3, pp. 228-237, Sep. 1999.
Springer-Verlag London Limited, (London, UK),
ISSN: 0268-8921.

Abstract- Laser-activated solid protein solder strips have been developed for peripheral nerve repair. Indocyanine green dye added to the solder strongly absorbs diode wavelengths (\sim800 nm) and causes localised heating and coagulation of the albumin protein solder. The protein strengthens the tissue join, particularly during the acute healing phase postoperative, while shielding the underlying axons from excessive thermal damage. In this investigation of the solid protein solder technique for nerve repair, the effect of laser irradiance on weld strength and solder and tissue temperature were studied. The tensile strength of repaired nerves rose steadily with increased irradiance reaching a maximum of 105±10 N/cm/cm at 12.7 W/cm/cm. At higher irradiances, tensile strength fell. The maximum temperature reached at the solder surface and at the solder/nerve interface, measured using a non-contact fibre optic radiometer and thermocouple, respectively, also rose steadily with laser irradiance. At 12.7 W/cm/cm, the temperatures reached at the surface and at the interface were 88±5°C and 71±4°C, respectively. This in vitro investigation demonstrates the feasibility of the laser-activated solid protein solder strips for peripheral nerve repair. The laser irradiance and the corresponding solder surface temperature for optimal tensile strength have been identified

Guoli Qu and Anthony E Parker, "New Model Extraction for Predicting Distortion in HEMT and MESFET Circuits," IEEE Microwave Guided Wave Lett., vol. 9, no. 9, pp. 363-365, Sep. 1999.
The Institute of Electrical and Electronics Engineers, Inc., New York, NY, USA, (New York, NY, USA),
ISSN: 1051-8207.

Abstract- A new method is presented for extracting Taylor series coefficients directly form IM measurements for modeling IM distortion in HEMT and MESFET circuits. It is based on an improved model that uses better simplifying assumptions. The method gives a substantially more accurate characterization, especially in the saturation region, required for amplifier designs.

Karen M McNally, Anthony E Parker, Douglas L Heintzelman, Brian S Sorg, Judith M Dawes, T Joshua Pfefer, and Ashley J Welch, "Dynamic Optical-Thermal Modeling of Laser Tissue Soldering with a Scanning Source," IEEE Journal of Selected Topics in Quantum Electronics, vol. 5, no. 4, pp. 1072-1082, July/Aug. 1999.
The Institute of Electrical and Electronics Engineers, Inc., New York, NY, USA, (New York, NY, USA),
ISSN: 1077-260X.

Abstract- A transient two-dimensional optical-thermal model that accounts for dynamic changes in optical and thermal properties with temperature was developed to investigate the mechanisms leading to thermal damage during laser tissue soldering. The model was implemented using the electrical circuit simulator SPICE (Simulation Program with Integrated Circuit Emphasis). Electrical analogies for the optical and thermal behavior of the solder and tissue were established. With these analogies, light was propagated using a flux representation of the light and the electrical simulator was used to calculate heat transfer with an algorithm based on the finite difference technique. Thermal damage was calculated using the Arrhenius rate process relation. Temperature-dependent absorption and scattering coefficients, thermal conductivity and thermal diffusivity, were incorporated in the SPice Optical-Thermal Simulation (SPOTS), as well as the time-domain behavior of a scanning laser source. Experimental results from an {\it in vitro} study performed using an 808-nm diode laser in conjunction with an indocyanine green-doped albumin protein solder to repair bovine aorta specimens compared favorably with numerical results obtained from SPOTS using dynamic optical and thermal properties. The maximum surface temperature was over-estimated by almost 10\% when dynamic properties were not taken into account. This difference corresponds to over two orders of magnitude difference in terms of the Arrhenius tissue damage integral. The incorporation of dynamic changes in optical and thermal properties of tissue during laser-induced heating represents a significant advance in computer modeling of laser tissue interactions.

Jodi Steel and Anthony Parker, "Frequency-Dependent Distortion Mechanism in a Broadband Amplifier," in 53rd ARFTG Conference Digest, (Ed Godshalk, Ed.), West Coast Anaheim Hotel, Anaheim, California, 18 June 1999, Automated RF Techniques Group, ARFTG Conference Archive, pp. 15-24, The Institute of Electrical and Electronics Engineers, Inc., New York, NY, USA

ISBN: 0-9717762-0-2,
CD-ROM File: //documents/53\_020.pdf.

Abstract- Investigation has been undertaken to assess the feasibility of black-box models for broadband cable amplifiers. Frequency-dependence in the distortion behaviour of these amplifiers is not account for in earlier-proposed two-block models. A new model with inherent frequency dependence in its distortion behaviour is presented.

D R Webster, A E Parker, M. Hutabarat, G. R. Ataei, D G. Haigh, and P. Radmore, "Experience of Developing and Using CAD Tools For III-V FETs Effectively in a Nonideal World," in IEE Colloquium on Effective Microwave CAD Tools, London, UK, 24 May 1999, number 064 in IEE 1999 Seminar Digests, pp. 3/1-3/16, The Institution Electrical Engineers, Savoy Place, London, UK

ISSN: 0963-3308.

Abstract- This paper examines intermodulation (IM) minima generated by the nonlinear drain-source current characteristics of HEMTs. This investigation is based on a more accurate intermodulation distortion model recently proposed by Qu and Parker (see The Proc. of 14th Australian Microelectronics Conference, p. 70-5, Oct. 1997). The IM cancellation conditions in terms of the Taylor series coefficients are established and verified with measurement and simulation. Second and third-order intermodulation cancellation can be assessed by simple examination of the transconductance characteristics of the device. This permits routine selection of optional bias after characterising the devices.

Anthony E Parker, Jonathan B. Scott, and David E. Root, [cort99] "Modeling and Characterization of Non-linearity in PHEMTs," in Proceedings CORT, Santa Rosa, California, 17-19 May 1999, Hewlett-Packard Co.

Abstract- An analytic model of HP MWTC's PHEMT devices has been developed for predicting non-linearity in communications and instrumentation circuits. This is a major step in an investigation to develop a single model that will be suitable for both high- and low-power applications.

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