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Publications in 1996-1998

Danny R. Webster, Anthony Edward Parker, M. T. Hutabarat, and David G. Haigh, [edmo98b] "Modifying the Parker Skellern MESFET SPICE Model to have Continuous Derivatives at Zero Drain Bias," in IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronics Applications, (Dr M.Missou, Ed.), Manchester, UK, 23-24 Nov. 1998, pp. 225-233, The Institute of Electrical and Electronics Engineers, UK

ISBN: 0-7803-4333-6.

Abstract- This paper presents a modified version of the Parker Skellern model that is suitable for simulating cold FET circuits. The model is shown to fit the DC I-V characteristics and gives realistic predictions of small signal bias dependent distortion. It is shown that the effective pinch off voltage around zero bias has a unity positive gradient with drain bias in contrast with the small negative gradient that occurs in the saturated region.

Danny R. Webster, Anthony Edward Parker, and David G. Haigh, [edmo98a] "Observations on the Effect of Bias on Pulsed I-V Characteristics of MESFETs and HEMTs," in IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronics Applications, (Dr M.Missou, Ed.), Manchester, UK, 23-24 Nov. 1998, pp. 19-28, The Institute of Electrical and Electronics Engineers, UK

ISBN: 0-7803-4333-6.

Abstract- This paper uses a primitive model to explore bias dependent frequency dispersion effects that occur in GaAs MESFETs and AlGaAs/InGaAs/GaAs HEMTs. The effects observed include both well known effects such as self heating and pinch off modulation together with previously unreported effects such as variations of RF knee voltage, RF $\beta$ and changes of pinch off softness with bias.

Danny R. Webster, Anthony Edward Parker M Hutabarat, G. R. Ataei, David G. Haigh, and P. Radmore, "Developments in Linear and Nonlinear FET Circuit Design Using Derivative Superposition," in IEE Colloquium on Analog Signal Processing, (Prof. John Lidgey, Ed.), Oxford, UK, 28 Oct. 1998, number 472 in IEE 1998 Seminar Digests, pp. 1-10, The Institution Electrical Engineers, Savoy Place, London, UK

ISSN: 0963-3308.

Abstract- This paper describes a number of emerging results pertaining to a circuit design technique called derivative superposition. A number of different approaches to designing both linear and nonlinear circuits with derivative superposition are described. Limitations of currently available CAD models are identified. The measured performance of a 100 mW power amplifier, a broadband frequency doubler and a frequency tripler designed with derivative superposition are presented.

Anthony Edward Parker and David E. Root, "Pulse Measurements Quantify Dispersion in PHEMTs," in Symposium on Signals, Systems, and Electronics, Pisa, Italy, 29 Sep. - 2 Oct. 1998, URSI and IEEE, pp. 444-449, The Institute of Electrical and Electronics Engineers, Inc., New York, NY, USA

ISBN: 0-7803-4900-8.

Abstract- Pulsed-bias measurements provide the necessary information for a measurement-based model capable of predicting dynamic anomalies in PHEMT devices. The measured behaviour is separated into thermal and `trapping' effects. After de-embedding the thermal effects, the device behaviour is found to be defined in terms of two distinct pulsed characteristics, depending on the bias point. A model is implemented by calculating drain current as a weighted sum of these two pulsed characteristics using a weighting that is an empirical function of bias. The current is then corrected for heating by a function of average power. Time constants are introduced to dynamically calculate the average bias potentials and power. The results reported show that the dynamic behaviour of PHEMTs follows an easily described pattern than can be observed with the measurement procedure that is also presented. It is demonstrated that pulse characterisation, as used in this procedure, is essential for characterising PHEMTs.

Guoli Qu and Anthony Edward Parker, "Intermodulation Cancellation in HEMTs," in International Conference on Microwave and Millimeter Wave Technology Proceedings, (Fu-Jiang Liao, Ed.), Beijing, China, 18-20 Aug. 1998, Chinese Institute of Electronics and The Institute of Electrical and Electronics Engineers, pp. 84-87, The Institute of Electrical and Electronics Engineers, Inc., New York, NY, USA

ISBN: 0-7803-4308-5.

Abstract- This paper examines intermodulation (IM) minima generated by the nonlinear drain-source current characteristics of HEMTs. This investigation is based on a more accurate intermodulation distortion model recently proposed in [ 1]. The IM cancellation conditions in terms of the Taylor series coefficients are established and verified with measurement and simulation. Second and third-order intermodulation cancellation can be assessed by simple examination of the transconductance characteristics of the device. This permits routine selection of optional bias after characterising the devices.

Guoli Qu and Anthony E Parker, "Validation of a new HEMT model by intermodulation characterization," in IEEE MTT-S International Microwave Symposium Digest of Technical Papers, (Raymond Meixner, Ed.), Baltimore, Maryland, USA, 7-12 June 1998, vol. 2 of 1998 IEEE MTT-S International Microwave Symposium Digest, pp. 745-748, The Institute of Electrical and Electronics Engineers, Inc., New York, NY, USA

ISSN: 0149-6298,
ISBN: 0-7803-4308-5.

Abstract- A new HEMT model is presented. The second and third-order intermodulation products of HEMT amplifiers are investigated at low frequency (50 MHz) and high frequency (1 GHz) respectively. Simulations performed with SPICE agree well with measurements. The contribution of nonlinear capacitance to intermodulation distortion is investigated.

Anthony Edward Parker and David E. Root, "Pulse Measurements Quantify Dispersion in PHEMTs," in Proceedings CORT, Milpitas, California, 14-15 May 1998, Hewlett-Packard Co.

Abstract- Rate dependent anomalies in HP MWTC's PHEMT devices have been quantified with fast throughput pulsed-bias Characterization. Measured Behavior Displays Clear Evidence Of Dispersion And Of Self Heating. The Dispersion Exhibits A Definite Pattern That Is Strongly Related To Bias But Is Hidden From Static Measurements. The Results Allow Self-Heating To Be Separated From Dispersion, So That Both Can Be Implemented In A Dynamic Simulation Model. A;;;

Danny R. Webster, M. T. Hutabarat, Anthony Edward Parker, and D. G. Haigh, "Effect of Model Derivative Discontinuities on Cold FET Distortion Simulations," in EDMO'97 High Performance Electron Devices for Microwave and Optoelectronics Applications, (Ali A Rezazadeh, Ed.), Kings College, London, 24-25 Nov. 1997, The Institution Electrical Engineers and The Institute of Electrical and Electronics Engineers, pp. 118-123, The Institute of Electrical and Electronics Engineers, UK

ISBN: 0-7803-4135-X.

Abstract- This work presents a description of the nonlinear behaviour of the cold FET. A characterisation technique is described together with typical measurements. The work describes key weaknesses in popular simulator models that prevent realistic simulation of 3rd order intermodulation distortion performance of cold FET attenuators, mixers and switches. This includes a previously undescribed derivative discontinuity peculiar to the cold FET condition.

James Rathmell, Jonathan Scott, and Anthony Parker, "TDFD-Based Measurement of Analog-to-Digital Converter Nonlinearity," Journal of the Audio Engineering Society, vol. 45, no. 10, pp. 832-840, Oct. 1997.
Audio Engineering Society, Inc., New York, (New York, NY, USA),
ISSN: 0004-7554.

Abstract- Analog-to-digital converters (ADCs) are central to modern audio, video, and RF systems, with some modern converters providing 23 plus ``significant'' bits. With such systems, performance is usually limited by audible distortion. Consequently linearity tests, analogous to distortion measurements, are adapted to test performance. The total difference-frequency distortion (TDFD) test is a modern standard for distortion measurement in the audio field, and its uniquely powerful advantages may be transferred to the realm of ADC testing. Building on existing work, a straightforward TDFD test for ADC systems is described and demonstrated. Measurements of example ADC systems are presented. A simple relationship between distortion and effective bits is derived, as a measure of performance, and testing guidelines are given.

Guoli Qu and Anthony Edward Parker, "Modelling intermodulation distortion in MESFETs and HEMTs," in 14th Australian Microelectronics Conference Proceedings, Melbourne, Australia, 29 Sep. - 1 Oct. 1997, pp. 70-75, The IREE Society of The Institution of Engineers, Australia

ISBN: 0-909394-43-1.

Abstract- A qualitative analysis of intermodulation distortion in MESFET/HEMT amplifiers based on a two-dimensional Taylor's series is presented. The contribution of the second-order terms to the third-order intermodulation and the contribution of cross-terms to the generation of intermodulation products are considered. Predictions agree well with measurements.

Karina E. Osgood, Jean LaChapelle, Paul Schwab, B. Griffin, F. McGrath, G. Wells, B. English, Neil Weste, T Parker, David James Skellern, and T Percival, "A flexible approach to 5GHz U-NII band WLAN radio development," in Workshop on Applications in Radio Science, Barossa Valley, Australia, 21-23 Sep. 1997, The Australia Academy of Science, pp. 175-180, National Committee for Radio Science

ISBN: 0-85847-208-2.

Abstract- This paper summarizes developments aimed at providing cheap manufacturable 5 GHz data radio front-ends for the newly created U-NII and HIPERLAN bands. The result is a set of reconfigurable modules for radio architecture experimentation and a small form factor 5 GHz radio for WLAN and link applications which is economical and manufacturable in volume.

Karen M. McNally, Judith M. Dawes, A. Lauto, Anthony Edward Parker, Earl R. Owen, and James A. Piper, [bios97] "Laser solder repair technique for nerve anastomosis: temperatures required for optimal tensile strength," in SPIE Proceedings LASER tissue interaction, Tissue optics, and Laser welding III, (G. P. Delacretaz, L. O. Svaasand, R. W. Steiner, R Pini, and G. Godlewski, Eds.), San Remo, Italy, 4-8 Sep. 1997, BIOS Europe 97, pp. 118-123, SPIE International Society for Optical Engineering Bellingham, WA USA

ISBN: 0-8194-2627-X.

Abstract- empty abstract

Anthony Edward Parker and David James Skellern, "A Realistic Large-Signal MESFET Model for SPICE," IEEE Transactions on Microwave Theory and Techniques, vol. 45, no. 9, pp. 1563-1571, Sep. 1997.
The Institute of Electrical and Electronics Engineers, Inc., New York, NY, USA, (New York, NY, USA),
ISSN: 0018-9480.

Abstract- A comprehensive large-signal MESFET model that provides a realistic description of measured characteristics over all operating regions is presented. It describes subthreshold conduction and breakdown. It has frequency dispersion of both transconductance and drain conductance, and derates with power dissipation. All derivatives are continuous for a realistic description of circuit distortion and intermodulation. The model has improved descriptions of capacitance and bias dependence. It has small-signal S-parameter accuracy extended to a wide range of operating conditions. The model is implemented with new techniques for continuity and dispersion. These provide accurate prediction of circuit performance and also improve simulation speed.

Guoli Qu and Anthony Edward Parker, "Analysis of intermodulation in HEMT common source amplifiers," in 6th International Symposium on Recent Advances in Microwave Technology Proceedings, (B. S. Rawat and Z. Siyong, Eds.), Beijing, China, 5-7 Aug. 1997, pp. 243-246, The Institute of Electrical and Electronics Engineers, Inc., New York, NY, USA

ISBN: 7-5053-4126-X.

Abstract- The second- and third-order intermodulation products in a HEMT commonsource amplifier are investigated by measurement and simulation of IM products as a function of gate-source voltage, drain-source voltage as well as input power level at low frequency (~50 MHz). Simulations were performed by a recently proposed SPICE model and a simple approach proposed in this paper. Measurements and simulations with the model incorporating two capacitance descriptions were also performed at high frequency (~1 GHz). Excellent agreement between simulated and measured IM product was demonstrated.

Jodi G. Steel, Anthony Edward Parker, and David James Skellern, "Characterisation of cable amplifiers for broadband network applications," in 49th ARFTG Conference Digest, The Brown Palace Hotel, Denver, Colorado, 13 June 1997, pp. 39-45, The Institute of Electrical and Electronics Engineers, Inc., New York, NY, USA.

Abstract- A characterisation of cable network elements to facilitate accurate simulation and analysis for the design of digital cable networks is presented. Nonlinear and frequency-dependent blocks are proposed for modelling each network element. Complex behaviour of a network can be described by a combination of these simple blocks. The technique is illustrated by application to a cable amplifier.

Karina Osgood and Anthony Parker, "Novel method for Determination of Junction-FET Access Resistances," in IEEE MTT-S International Microwave Symposium Digest of Technical Papers, (Gerhard A Koepf, Ed.), Denver, Colorado, USA, 8-13 June 1997, vol. 2 of 1997 IEEE MTT-S International Microwave Symposium Digest, pp. 873-876, The Institute of Electrical and Electronics Engineers, Inc., New York, NY, USA

ISSN: 0149-6298,
ISBN: 0-7803-3814-6.

Abstract- A new method for extracting JFET access resistances, which does not need to consider the intrinsic channel resistance of the device, is presented. The method uses an impedance data set measured over a range of bias points. The data set is reduced to those points with reciprocal impedance matrices and appropriate bias conditions. The extraction procedure is ideal for automated device characterisation.

Guoli Qu and Anthony Edward Parker, "Analysis of intermodulation in HEMTs," in Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings, (C. Jagadish, Ed.), Canberra, Australia, 1997, IEEE-EDS, IEOS, Australian Materials Research Society and the Australian Institute of Physics, pp. 227-230, The Institute of Electrical and Electronics Engineers, Inc., New York, NY, USA

ISBN: 0-7803-3374-8.

Abstract- This paper examines intermodulation nulling generated by the nonlinear current voltage characteristics of HEMTs. The conditions for intermodulation cancellation in terms of the coefficients of a two-dimensional Taylor's series expansion are established and verified with measurement and simulation. Second and third-order intermodulation cancellation can be assessed by simple examintaion of the transconductance characteristics of the device. This permits routine selection of optimal bias after characterising the device.

Guoli Qu and Anthony Edward Parker, "Analysis of intermodulation in high electron mobility transistors," in Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings, (C Jagadish, Ed.), Canberra, Australia, 8-11 Dec. 1996, IEEE-EDS, IEOS, Australian Materials Research Society and the Australian Institute of Physics, The Institute of Electrical and Electronics Engineers, Inc., New York, NY, USA.

Abstract- This paper examines intermodulation nulling generated by the nonlinear current voltage characteristics of HEMTs. The conditions for intermodulation cancellation in terms of the coefficients of a two-dimensional Taylor's series expansion are established and verified with measurement and simulation. Second and third-order intermodulation cancellation can be assessed by simple examination of the transconductance characteristics of the device. This permits routine selection of optimal bias after characterising the device.

Jonathan Scott, James Grantley Rathmell, Anthony Parker, and Mohamed Sayed, "Pulsed Device Measurements and Applications," IEEE Transactions on Microwave Theory and Techniques, vol. 44, no. 12, pp. 2718-2723, Dec. 1996.
The Institute of Electrical and Electronics Engineers, Inc., New York, NY, USA, (New York, NY, USA),
ISSN: 0018-9480.

Abstract- A pulsed measurement system can provide more than just isothermal characteristic data. An off-the-shelf system can determine rapidly the timing necessary for both pulsed-I-V and pulsed-S-parameter measurements to be isothermal and isodynamic. Instantaneous channel temperature may be determined. Thermal and charge-trapping effects can be separated and time constants measured. Full gain-derivative surfaces can be obtained far more efficiently than by spectral sweep measurements. Characteristics and transient effects following excursions beyond the safe-operating-area and into breakdown may be observed nondestructively.

Jonathan B. Scott, S. Roxenborg, and Anthony Edward Parker, "Improved triode model," in 6th Australian Regional Convention of the Audio Engineering Society, World Congress Centre, Melbourne, 10-12 Sep. 1996, vol. B-4 Preprint 4301, pp. 1-9, Audio Engineering Society, Inc., New York.

Abstract- Recent use of thermionic valves has grown to such a level that factories are being reopened, and many manufacturers offer equipment boasting the use of valves, commanding a great price. Interest in the design of valve equipment has lead to the appearance of CAD models of valves. We show that the theoretical model of a triode is a poor representation of its actual operation. We present an improved model. We show that our new model, based on experience gained modelling GaAs FETs, offers excellent agreement with values measured using two example tubes.

Jonathan B. Scott and Anthony Edward Parker, "A MOSFET model for the simulation of amplifier non-linearity," in 6th Australian Regional Convention of the Audio Engineering Society, World Congress Centre, Melbourne, 10-12 Sep. 1996, vol. B-1 Preprint 4298, pp. 1-11, Audio Engineering Society, Inc., New York.

Abstract- We demonstrate accurate prediction of the normal working distortion (weak nonlinearity) of a BJT amplifier circuit. It has not previously been possible to extend this technique to power-MOSFET-based circuits owing to the crude models available for these devices. Typical discrepancies between predicted and measured distortion figures are presented. An adaption of an advanced RF MESFET model is presented. This is fitted to Silicon medium-power MOSFETs of the type popular for audio applications. The new model equations are conveniently implemented as a SPICE subcircuit macromodel. Comparisons between measured and simulated values show greatly improved prediction of distortion for small-, low- and large-signal operation.

Jonathan B. Scott, James Grantley Rathmell, and Anthony Edward Parker, "TDFD-based measurement of analog-to-digital converter nonlinearity," in 6th Australian Regional Convention of the Audio Engineering Society, World Congress Centre, Melbourne, 10-12 Sep. 1996, vol. A-1 Preprint 4294, pp. 1-8, Audio Engineering Society, Inc., New York.

Abstract- Analog-to-Digital Converters (ADCs) are central to modern audio, video, and RF systems, with some modern converters providing 23-plus `significant' bits.[l, 2, 3] The measure of performance (effective bits) is recognised as depending upon system linearity. Consequently linearity tests, analogous to distortion measurements, are adapted to test performance.[4, 5] Total Difference-frequency Distortion (TDFD) is a modern standard for distortion measurement in the audio field, and its uniquely-powerful advantages may be transferred to the realm of ADC testing. Building on existing work[6, 7] we describe and demonstrate a straightforward TDFD test for ADC systems. Measurements of example ADC systems are presented to demonstrate the method. Testing guidelines are given.

G Qu and A Parker, "Continuous HEMT model for SPICE," Electronic Letters, vol. 32, no. 14, pp. 1321-1322, 4 July 1996.
The Institution Electrical Engineers, (Savoy Place, London, UK),
ISSN: 0013-5194.

Abstract- An HEMT model, suitable for SPICE, combines the linear, saturation, and subthreshold modes with a single smooth description. The new model features high order continuity for accurate prediction of current-voltage characteristics, gain, and distortion. This is demonstrated by comparison with measurement.

Jonathan B. Scott, Anthony Edward Parker, James Grantley Rathmell, and M. M. Sayed, "New applications for pulsed/isothermal test system," in 47th ARFTG Conference Digest, Moscone Convention Center, San Francisco, 20-21 June 1996, pp. 70-75, The Institute of Electrical and Electronics Engineers, Inc., New York, NY, USA.

Abstract- An Arbitrary Pulsed Semiconductor Parameter Analyser;;;

Anthony E Parker, "A realistic large-signal MESFET model for SPICE," in IEEE MTT-S International Microwave Symposium Digest of Technical Papers, (Richard G Ranson, Ed.), San Francisco, California, USA, 17-21 June 1996, vol. 3 of 1996 IEEE MTT-S International Microwave Symposium Digest, pp. 1763-1766, The Institute of Electrical and Electronics Engineers, Inc., New York, NY, USA

ISSN: 0149-6298,
ISBN: 0-7803-3246-6.

Abstract- A large-signal MESFET model, implemented with new techniques, has continuity and rate dependence. These features provide accurate prediction of circuit gain and distortion. The techniques also improve simulation speed. The model has improved descriptions of capacitance and bias dependence. It has small-signal S-parameter accuracy extended to a wide range of operating conditions. This model is now in several simulators including Pspice v6.2

Anthony Parker, Jonathan Scott, James Rathmell, and Mohamed Sayed, "Determining Timing for Isothermal Pulsed-bias S-parameter Measurements," in IEEE MTT-S International Microwave Symposium Digest of Technical Papers, (Richard G Ranson, Ed.), San Francisco, California, USA, 17-21 June 1996, vol. 3 of 1996 IEEE MTT-S International Microwave Symposium Digest, pp. 1707-1710, The Institute of Electrical and Electronics Engineers, Inc., New York, NY, USA

ISSN: 0149-6298,
ISBN: 0-7803-3246-6.

Abstract- S-parameters measured under pulsed conditions are shown to vary from their steady-state values with pulse measurement width and pulse repetition rate. A method is presented for determining suitable timing for isothermal, pulsed-bias, pulsed-RF, S-parameter measurement of GaAs devices. Variation of S-parameters with wafer temperature and with measurement duration and duty cycle are correlated.

D R Webster, D G Haigh, J B Scott, and A E Parker, "Derivative superposition --- a linearisation technique for ultra broadband systems," in IEE Colloquium on Wideband Circuit Modelling and Techniques, London, UK, 10 May 1996, number 111 in IEE 1996 Seminar Digests, pp. 3/1-3/14, The Institution Electrical Engineers, Savoy Place, London, UK

ISSN: 0963-3308.

Abstract- This paper summarises progress on a distortion reduction and nonlinear function synthesis technique called Derivative Superposition. The paper starts by reviewing the idea of Derivative Superposition. We show how low distortion amplifiers and function circuits such as frequency triplers can be designed. We review the results of a 4 HEMT low 3rd order distortion amplifier demonstrator. We consider the effect of the strong 2-port nonlinearity of a MESFET and show its effect on a 2 MESFET demonstrator. We describe progress on a software tool called ``Super Deriv'' that provides CAD support. We describe some alternative implementations of Derivative Superposition.

D R Webster, D G Haigh, G Passiopoulos, and A E Parker, "Distortion in Short Channel FET Circuits," in Low-power HF microelectronics a unified approach, (Gerson A S Machado, Ed.), number 8 in IEE Circuits and Systems Series, chapter 24, pp. 929-958. The Institution Electrical Engineers, Savoy Place, London, UK, May 1996.

ISBN: 0-85296-874-4.

Abstract- This chapter addresses a variey of distorion mechanisms that arise from short channel FET cicuits. The work is aimed at both traditional LF and RF design techniques. Although the work concentrates on GaAs FETs, many of the effects described will occur in CMOS, BJT, HBT and diode circuits. Whilst work on distorition has traditionally been strongly mathematical, this work is perhaps unique in having very little mathematical content whilst providing valuable insight into the behaviour of circuits containing non-linear components.

Anthony E Parker and Jonathan B Scott, "Modelling and characterisation of GaAs devices," in Low-power HF microelectronics a unified approach, (Gerson A S Machado, Ed.), number 8 in IEE Circuits and Systems Series, chapter 6, pp. 211-246. The Institution Electrical Engineers, Savoy Place, London, UK, May 1996.

ISBN: 0-85296-874-4.

Abstract- This chapter describes various III-V semiconductor FET characterisation and modelling techniques. Two new techniques for implementing large-signal models in SPICE have permitted the development of a new MESFET model, which is not only realistic but also runs more quickly. These techniques address continuity for distortion and intermodulation analysis, and rate-dependent and thermal transient behaviour. The model has accuracy extended over a range of operating conditions that is obtained by inclusion of secondary aspects of device operation. Accuracy is obtained with improved device characterisation to fit behavioural trends of device operation. In many applications this is more important than simply fitting traditional I-V and S-parameter measurements. Fast large-signal pulse measurements are considered as more suitable for characterising devices.

G Passiopoulos, D R Webster, A E Parker, D G Haigh, and I D Robertson, "Effect of bias and load on MESFET nonlinear characteristics," Electronic Letters, vol. 32, no. 8, pp. 741-742, 11 Apr. 1996.
The Institution Electrical Engineers, (Savoy Place, London, UK),
ISSN: 0013-5194.

Abstract- An investigation of the variation of measured and simulated nonlinear characteristics of a MESFET with bias and load resistance is reported. A discrete MESFET exhibits simultaneous low 2nd and 3rd order intermodulation distortion while yielding high gain and operating in its low noise region.

D R Webster, A E Parker, and D G Haigh, "HEMT model based on the Parker-Skellern MESFET model," Electronic Letters, vol. 32, no. 5, pp. 493-494, 29 Feb. 1996.
The Institution Electrical Engineers, (Savoy Place, London, UK),
ISSN: 0013-5194.

Abstract- A HEMT model based on the Parker-Skellern MESFET model is presented. The model correctly exhibits a fall in transconductance at high gate bias together with frequency dispersion in both transconductance and output conductance. This is verified using a comparison with measured results.

David Haigh, Danny Webster, Risto Kaunisto, Charles Nduijuba, Ahmad Khanifar, Mahmood Darvishzadeh, tony Parker, Jonathan Scott, and Iain Thayne, "Developments in RF circuit design," in IEE Colloquium on The R.F. Design Scene, London, UK, 15 Feb. 1996, number 030 in IEE 1996 Seminar Digests, pp. 4/1-4/10, The Institution Electrical Engineers, Savoy Place, London, UK

ISSN: 0963-3308.

Abstract- This paper describes work of the authors which is relevant to the RF design field. The emphasis is mainly but not entirely on MMIC solutions, in order to meet the need for low weight and low size at reasonable cost (assuming high production volume). The enormous signal dynamic range in radio receiver systems provides very demanding challenges for distortion and noise of RF components, both amplifiers, mixers and filters. Third order nonlinear distortion is of particular concern because it causes in-band spurious frequency components, leading to corruption of wanted frequency channels by unwanted channels. In this paper, we also consider the key requirements of low power supply voltage and low DC power consumption. Section 2 of this paper is concerned with device modelling and CAD which are central to the tasks of RF circuit design to minimise power supply voltage and power consumption, while meeting performance specifications, including intermodulation distortion. Section 3 describes a new circuit synthesis technique for RF components (amplifiers and mixers) to provide very low intermodulation distortion. In section 4, we summarise work on integrated active RF filters based on the use of active simulated inductances. Finally, in Section 5, we consider an alternative approach based on passive resonators with loss compensation by means of active devices, providing a solution with lower noise.

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